Samsung Begins Chip Production Using 3nm Process Technology with GAA Architecture
Optimized 3nm process achieves 45% reduced power usage, 23% improved performance, and 16% smaller surface area compared to 5nm process SEOUL, South Korea–(BUSINESS WIRE)–Samsung Electronics Co., Ltd., the world leader in semiconductor technology, today announced that it has started initial production of its 3-nanometer (nm) process node applying Gate-All-Around (GAA) transistor architecture. Multi-Bridge-Channel FET (MBCFET™), […]



